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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/735

Title: Junction Effect on Transport Properties of a Single Si Nanowire Metal–Semiconductor–Metal Device
Authors: Samanta, Sudeshna
Das, K
Raychaudhuri, A K
Keywords: Electrical transport and impedance spectroscopy
metal–semiconductor–metal (MSM) device
single Si nanowire
Issue Date: 2013
Publisher: IEEE Transactions on Nanotechnology
Citation: Sudeshna Samanta, K. Das, and A. K. Raychaudhuri, Junction Effect on Transport Properties of a Single Si Nanowire Metal–Semiconductor–Metal Device, IEEE Transactions on Nanotechnology, 12, 1089 (2013).
URI: http://hdl.handle.net/123456789/735
Appears in Collections:2013

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