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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/41

Title: Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)
Authors: Das, K
Das, A
Singha, R K
Ray, S K
Raychaudhuri, A K
Keywords: Ge islands
Ion-beam lithography
Self assembly
Surface patterning
Issue Date: 2012
Publisher: J Nanopart Res.
Citation: K. Das, S. Das, R. K. Singha, S. K. Ray, A. K. Raychaudhuri, Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100), J Nanopart Res., 2012, 14, 725
Abstract: We report the growth of Ge islands on Si (001) substrates with lithographically defined two dimensionally periodic pits using focused ion-beam patterning and molecular beam epitaxy. The formation of circularly ordered Ge islands has been achieved by means of nonuniform strain field around the periphery of the holes due to ion bombardment. Lateral ordering of the Ge islands have been controlled by both the pit size and pit separation. Preferential growth at the pit sites has also been achieved by using appropriate pattern shape and size.
URI: http://hdl.handle.net/123456789/41
Appears in Collections:2012

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