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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/40

Title: Non-Gaussian resistance noise in the ferromagnetic insulating state of a hole-doped manganite
Authors: Samanta, Sudeshna
Raychaudhuri, A K
Mukhovskii, Ya. M
Issue Date: 2012
Publisher: Physical Review B
Citation: Sudeshna Samanta, A. K. Raychaudhuri, Ya. M. Mukhovskii, Non-Gaussian resistance noise in the ferromagnetic insulating state of a hole-doped manganite, Physical Review B, 2012, 85, 045127
Abstract: We report the observation of a large 1/f noise in the ferromagnetic insulating state (FMI) of a hole doped manganite single crystal of La0.80Ca0.20MnO3,which manifests hopping conductivity in the presence of a Coulomb gap. The temperature-dependent noise magnitude decreases in the FMI state indicating a sharp freeze-out of the noise magnitude with temperature on cooling. As the material is cooled down below the ferromagnetic transition TC, the noise becomes non-Gaussian, as seen through the probability density function and second spectra. On further cooling in the FMI state, the noise becomes more non-Gaussian. The non-Gaussian noise is proposed to arise from charge fluctuations in a correlated glassy phase of the polaronic carriers which develop in these systems, as reported in recent simulation studies.
URI: http://hdl.handle.net/123456789/40
Appears in Collections:2012

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