|
S.N.Bose National Centre for Basic Sciences >
Library >
Publications >
2020 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/2314
|
| Title: | Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation |
| Authors: | Kumar, Ravinder
Panda, Debiprasad
Das, Debabrata
Chatterjee, Arka
Tongbram, Binita
Saha, Jhuma
Upadhyay, Sourabh
Kumar, Raman
Pal, Samir Kumar
Chakrabarti, Subhananda |
| Keywords: | Quantum dots
Molecular beam epitaxy
Photoluminescence
Time-resolved photoluminescence
Silicon photonics
Ion implantation |
| Issue Date: | 2020 |
| Publisher: | Journal of Luminescence |
| Citation: | Ravinder Kumar, Debiprasad Panda, Debabrata Das, Arka Chatterjee, Binita Tongbram, Jhuma Saha, Sourabh Upadhyay, Raman Kumar, Samir Kumar Pal and Subhananda Chakrabarti, Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation, Journal of Luminescence, 223, 117208, 2020 |
| URI: | http://hdl.handle.net/123456789/2314 |
| Appears in Collections: | 2020
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
