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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/2155

Title: Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics
Authors: Chatterjee, Arka
Panda, Debiprasad
Patwari, Jayita
Tongbram, Binita
Chakrabarti, Subhananda
Pal, Samir Kumar
Keywords: molecular beam epitaxy
InAs quantum dot
strain
photoluminescence
timeresolved photo-luminescence
photodetector
Issue Date: 2019
Publisher: Semiconductor Science and Technology
Citation: A. Chatterjee, D. Panda, J. Patwari, B. Tongbram, S. Chakrabarti, S. K. Pal, Strain Relaxation in InAs Quantum Dots through Capping Layer Variation and Its Impact on The Ultrafast Carrier Dynamics, Semiconductor Science and Technology 34 (2019) 095017
URI: http://hdl.handle.net/123456789/2155
Appears in Collections:2019

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