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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/2031

Title: Floating Back-Gate Field Effect Transistor Fabricated Using a Single Nanowire of Charge Transfer Complex as a Channel
Authors: Basori, Rabaya
Raychaudhuri, Arup Kumar
Issue Date: 2018
Publisher: J. Phys. Chem. C
Citation: Rabaya Basori and A. K. Raychaudhuri, Floating Back-Gate Field Effect Transistor Fabricated Using a Single Nanowire of Charge Transfer Complex as a Channel, J. Phys. Chem. C, 122, 1054−1060 (2018)
URI: http://hdl.handle.net/123456789/2031
Appears in Collections:2018

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