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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1849

Title: Emission characteristics of self-assembled strained Ge1−xSnx islands for sources in the optical communication region
Authors: Bar, Rajshekhar
Katiyar, Ajit K
Aluguri, Rakesh
Ray, S K
Keywords: Ge1−xSnx islands
molecular beam epitaxy
Issue Date: 2017
Publisher: Nanotechnology
Citation: R. Bar, A. Katiyar, R. Aluguri and S. K. Ray, Emission characteristics of self-assembled strained Ge1-xSnx islands for sources in the optical communication region, Nanotechnology, 28, 295201 (2017)
URI: http://hdl.handle.net/123456789/1849
Appears in Collections:2017

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