S.N.Bose National Centre for Basic Sciences >
Library >
Publications >
2011 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/124
|
Title: | Observation of a large gate-controlled persistent photoconduction in single crystal ZnO at room temperature |
Authors: | Mondal, Shahnewaz Raychaudhuri, A K |
Issue Date: | 2011 |
Publisher: | Applied Physics Letters |
Citation: | Shanewaz Mandal and A. K. Raychaudhuri, Observation of a large gate- controlled persistent photoconduction in single crystal ZnO at room temperatures, Applied Physics Letters, 2011, 98, 023501 |
Abstract: | Gate-controlled enhanced photoconductivity at room temperature is reported in single crystal ZnO using moderate bias and band gap illumination. A substantial part of the enhanced photocurrent is retained over a long time as a persistent photocurrent when the illumination is removed but the gate
voltage applied with a polymer-electrolyte gate is retained. The current on the removal of illumination shows a stretched exponential decay with time constants more than few hundreds of seconds. An explanation based on change in charge state of oxygen vacancy has been proposed. |
URI: | http://hdl.handle.net/123456789/124 |
Appears in Collections: | 2011
|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|